Speakers
Description
In this contribution we will review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors.
Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Diodes, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~ 10 larger than standard silicon detectors.
We will concentrate on the latest results from laboratory measurements, including statistics measurements on CNM 50um irradiated multi-pad sensors, determination of alpha parameters as a function of the fluence, temperature dependence of the gain, and gain measurements using red led.
Preliminary results from beam tests on 50 and 80um thick LGAD produced by Hamamatsu will be discussed.
