5–7 Jun 2017
Krakow
Europe/Zurich timezone

Timing performance and gain analysis of heavily irradiated LGAD diodes

6 Jun 2017, 14:40
20m
Krakow

Krakow

AGH UST Al. Mickiewicza 30 30-059 Krakow, Poland

Speaker

Dr Vagelis Gkougkousis (Institut de Fisica d'Altes Energies (IFAE))

Description

Using 120GeV pions at CERN SPS, the timing resolution and gain performance of heavily irradiated LGAD single pad diodes is evaluated. Samples were irradiated with thermal neutrons at JSI with fluences varying from 1e15 neq/cm2 to 6e15 neq/cm2. Single irradiated PIN samples were also included and presented for comparison. The voltage and temperature dependence of sample performance is presented while through use of two different amplifiers, the signal over noise ratio is evaluated for each setup. Two quartz coupled SiPMs were used as timing reference while sample leakage current was monitored for both samples and SiPMs.

Primary author

Dr Vagelis Gkougkousis (Institut de Fisica d'Altes Energies (IFAE))

Presentation materials