Speaker
Gregor Kramberger
(Jozef Stefan Institute (SI))
Description
The radiation damage effects in thin (50 and 80 microns) LGADs produced by HPK were investigated. The devices with different doping of multiplication layer were studied after neutron irradiations by TCT and charge collection measurements. The results of these measurements will be presented together with comparison with similar CNM devices.
Primary authors
Gregor Kramberger
(Jozef Stefan Institute (SI))
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
Abraham Seiden
(University of California,Santa Cruz (US))
Nicolo Cartiglia
(Universita e INFN Torino (IT))
Vladimir Cindro
(Jozef Stefan Institute (SI))
Igor Mandic
(Jozef Stefan Institute (SI))
Marko Mikuz
(Jozef Stefan Institute (SI))
Martin Petek
(Jozef Stefan Institute)
