5–7 Jun 2017
Krakow
Europe/Zurich timezone

Radiation hardness of a CMOS sensor process for a novel Depleted Monolithic Active Pixel Sensor

7 Jun 2017, 10:20
20m
Krakow

Krakow

AGH UST Al. Mickiewicza 30 30-059 Krakow, Poland

Speaker

Bojan Hiti (Jozef Stefan Institute (SI))

Description

Depleted active pixel sensors (DMAPS) are considered for use in outer layers of the upgraded ATLAS pixel detector at HL-LHC. In my talk I will present studies of radiation hardness of a novel low capacitance DMAPS produced by TowerJazz in a 180 nm CMOS process. Charge collection takes place in a high resistivity epitaxial layer, which can be fully depleted even after irradiation. Sensors irradiated up to 1e16 neq/cm2 were characterised by Edge-TCT, Sr90 MIPs, test beam and with X-rays. An overview of results of measurements will be given.

Author

Bojan Hiti (Jozef Stefan Institute (SI))

Presentation materials