RPC 2018 - THE XIV WORKSHOP ON RESISTIVE PLATE CHAMBERS AND RELATED DETECTORS

Design a TDC in SiGe for the Front-end electronics for the RPCs used in a high-rate experiment.

22 Feb 2018, 14:20

20m

Other Institutes

Plenary Talk High Rate / New electronics

Speaker

Salvatore Bruno (INFN e Universita Roma Tor Vergata (IT))

Description

With the new RPC’s generation, it is possible to work with induced signals of hundreds $\mu V$, hence the front-end electronics is an important and delicate part of the detector order to get a detectable signal. The electronic chain is made up of an amplifier, a discriminator, a TDC. The new front-end is realized by the use of silicon-germanium (SiGe) components, provided by IHP microelectronics. With this technology, it is possible to implement BJT and MOS transistors on the same chip. The benefit of this improvement is minimized: power consumption of the channels ($2÷3$ $\frac{mW}{ch}$), noise (500 $e^{-}$ 𝑟.𝑚.𝑠), radiation hardness (10 𝑘𝐺𝑦,${10}^3\frac{n}{cm}$) and it maximizes the speed of response electronics.
In this talk I will show the first results of TDC prototypes. The TDC uses a local oscillator, that has an oscillation range between $0.6÷3$ GHz, and a the temporal jitter of 15 ps. The data output from the TDC are presented in binary in order to lighten data processing to the acquisition system. Moreover, we are studying a way to minimize system latency. This optimization involves the adding a serializer (PISO) that sends the TDC data output to the acquisition system at 2 GHz.

Presentation materials

Salvatore_Bruno_RPC_conference_2018_Mexico.pdf