Apr 9 – 13, 2018
Beurs van Berlage
Europe/Zurich timezone

N-doping Research at IHEP

Apr 10, 2018, 3:30 PM
P4 Berlage zaal (1.9)

P4 Berlage zaal


Board: 2AMS16A


Peng Sha (IHEP, CAS (China))


Recently, nitrogen doping (N-doping) technology has been proved to increase Q value of superconducting cavity obviously, which lowers the BCS resistance of Nb. After N-doping, Q of 9-cell 1.3 GHz cavity can be increased to 3E10 at Eacc = 16 MV/m, while 1.5*1010 without N-doping. Since 2013, there have been over 60 cavities nitrogen doped at FNAL, JLAB and Cornell. The Circular Electron Collider (CEPC) has been proposed by IHEP in China, while requests Q=4E10@Eacc=22 MV/m for 650 MHz 2-cell cavity. Bulk Nb N-doped has been adopted for these cavities, as well as Shanghai Coherent Light Facility (SCLF). So research of N-doping has been going on since 2015. Experiments of niobium samples have showed that nitrogen concentration at niobium surface increased a lot after N-doping. After then, two 650 MHz single-cell cavities completed vertical tests, which have shown Q increase at low fields.

Primary author

Peng Sha (IHEP, CAS (China))


Baiqi Liu (IHEP, CAS (China)) Chao Dong (IHEP, CAS (China)) Haiyin Lin (IHEP, CAS (China)) Hongjuan Zheng (IHEP, CAS (China)) Jiyuan Zhai (IHEP, CAS (China)) Zhenghui Mi (IHEP, CAS (China)) Zhongquan Li (IHEP, CAS (China))

Presentation materials