Speaker
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Inst. RAS)
Description
Results on interstrip isolation resistance in Si position-sensitive detectors are presented. It is demonstrated that experimental I-V characteristics of the interstrip gap show a step in the current. This feature is caused by the current redistribution between neighboring strips and its influence on the interstrip resistance is more pronounced than ohmic conductance between the strips.
Author
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Inst. RAS)
Co-authors
Nadezda Safonova
(Ioffe Physical-Technical Inst. RAS)
Dr
Nikolai Egorov
(Research Institite of Material Science and Technology)
Sergey Golubkov
(Research Institite of Material Science and Technology)
Dr
Vladimir Eremin
(Ioffe Physical-Technical Inst. RAS)
