Speaker
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute RAS)
Description
The results of modeling of CCE vs. fluence and CCE vs. voltage dependences in a wide range of fluences and bias voltage are presented. The shape of the curves is discussed in the frame of PTI model for avalanche multiplication in p-n junctions on deep level rich semiconductors.
Author
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute RAS)
Co-authors
Prof.
Andrei Zabrodskii
(Ioffe Physical-Technical Institute RAS)
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
Dr
Jaakko Härkönen
(3Helsinki Institute of Physics, CERN/PH,)
Dr
Zheng Li
(Brookhaven National Laboratory)
