Speaker
Volodymyr Khomenkov
(Hamburg University)
Description
Thick epitaxial material (e.g. 150 um) may be an option for application in S-LHC, therefore we are interested in the microscopic defect generation and the macroscopic parameters of this material.
DLTS and TSC study of n-type pad diodes with thicknesses up to 150 um have been performed after irradiation with 23 GeV protons and following isochronal annealing. A correlation between macroscopic electrical parameters and concentrations of corresponding defects has been observed.
Author
Volodymyr Khomenkov
(Hamburg University)
Co-authors
Alexandra Junkes
(Hamburg University)
Cristina Pirvutoiu
(Hamburg University)
Eckhart Fretwurst
(Hamburg University)
Ioana Pintilie
(NIMP Bucharest)
