16–18 Nov 2009
CERN
Europe/Zurich timezone

Charge collection annealing study of p-in-n silicon microstrip detectors

17 Nov 2009, 14:40
20m
TE Auditorium (CERN)

TE Auditorium

CERN

Speaker

Craig Wiglesworth (Department of Physics)

Description

The annealling of the charge collection as a function of the RT equivalent time (CCET) is now well established with n-side readout sensors. It is though less known with p-in-n sensors. Results of CCET measurements with this type of detectors irradiated to the dose anticipated for the inner microstrip layer of the present ATLAS SCT are here presented. The results are discussed in view of possible annealing scenarios in the ATLAS experiments. Also, future work for confirming the present studies with sensors of the same type of the ATLAS SCT p-in-n devices is annonunced.

Author

Craig Wiglesworth (Department of Physics)

Presentation materials