16–18 Nov 2009
CERN
Europe/Zurich timezone

Effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors

17 Nov 2009, 11:45
15m
TE Auditorium (CERN)

TE Auditorium

CERN

Speaker

Marko MILOVANOVIĆ (Jozef Stefan Institute, Ljubljana)

Description

Electric field and charge collection properties of a n+-p strip detector irradiated to 5e15 cm-2 were investigated by Edge-TCT (E-TCT) during long term annealing. It was found that charge collection improves with time, due to larger avalanche multiplication. On the other hand, when operated under forward bias, charge collection properties of the detector were not affected by the annealing process.

Author

Marko MILOVANOVIĆ (Jozef Stefan Institute, Ljubljana)

Co-authors

Gregor KRAMBERGER (Jozef Stefan Institute, Ljubljana) Igor MANDIĆ (Jozef Stefan Institute, Ljubljana) Marko MIKUŽ (Jozef Stefan Institute, Ljubljana) Marko ZAVRTANIK (Jozef Stefan Institute, Ljubljana) Vladimir CINDRO (Jozef Stefan Institute, Ljubljana)

Presentation materials