Speaker
Jörn Lange
(University of Hamburg)
Description
Recently, charge multiplication has been observed in charge collection measurements of highly irradiated (i.e. several 1e15 to 1e16 n/cm²) 75, 100 and 150 µm thin epitaxial silicon diodes. CCE results for different sources (670, 830, 1060 nm laser light and 5.8 MeV alpha particles with different absorber layers between source and diode) will be presented and compared to theoretical considerations. The pulse height and charge spectra for single TCT pulses were investigated and compared for different charge multiplication levels. Moreover, the spatial homogeneity and long-term stability of collected charge in the multiplication regime were studied.
Author
Jörn Lange
(University of Hamburg)
Co-authors
Eckhart Fretwurst
(University of Hamburg)
Gunnar Lindström
(University of Hamburg)
Julian Becker
(University of Hamburg)
Robert Klanner
(University of Hamburg)
