The ILC experiment needs a vertex detector with satisfactory space and time resolutions to reconstruct decays of heavy flavor quarks and tau leptons for precise measurement of the Higgs boson and search for physics beyond the Standard Model. We have been developing a monolithic pixel detector for the ILC, SOFIST, with Silicon-on-Insulator technology; this is fabricated using a 200 nm FD-SOI...
In conventional method of Compton imaging, only the information of gamma rays is used to estimate the location of radiation source. However, because of the information deficiency of recoil electrons occurred in Compton scattering process, signal-to-noise ratio (SNR) and angular resolution will be reduced. Recently, deep learning has become an increasingly important hot pot. With deep learning,...
We have been developing a monolithic active pixel sensor with the silicon-on-insulator (SOI) CMOS technology for use in future X-ray astronomical satellite missions. Our objective is to replace the X-ray Charge Coupled Device (CCD), which is the standard detector in the field, by offering high coincidence time resolution (∼ 50 ns), superior hit-position readout time (∼ 10 μs), and wide...
We have been developing monolithic active pixel sensors for X-ray astronomy, referred to as "XRPIX", based on silicon-on-insulator (SOI) CMOS technology. Each pixel has a buried p-well (BPW) around sense node at the pixel center to suppress the back-gate effect. In our early device, XRPIX1b, charge-collection efficiency (CCE) was degraded because the in-pixel circuitry placed outside the BPW...
Tracking and vertex detectors at future linear colliders such as CLIC require a high-precision position measurement. A single-point spatial resolution of about 3 microns is foreseen for the CLIC vertex detector. In order to achieve this goal, detectors with low material budget and small pitch have to be developed. One solution for this are monolithic pixel structures. These do not require...
We have been developing the X-ray SOI (Silicon-On-Insulator) pixel detector named XRPIX for the future astrophysical satellites. XRPIX is a monolithic active pixel sensor composed of high-resistivity Si sensor, thin SiO2 insulator and CMOS pixel circuits by utilizing the SOI technology. Since XRPIX is capable of event-driven readout, it can achieve a high timing resolution better than ∼10 μs,...
We have been developing SOI pixel sensors for X-ray astronomy, called “XRPIX", which are fabricated using the silicon-on-insulator CMOS technology.XRPIX aims to detect X-rays in the energy band from $ 0.5 ~\rm keV $ to $ 20 ~\rm keV $. The device consists of a fully depleted high-resistivity silicon sensor layer, a low-resistivity silicon layer for CMOS readout circuit, and a buried oxide...
The European Synchrotron Radiation Facility (ESRF) is being subjected to the second phase of its upgrade. Thanks to this upgrade, the new storage ring will be able to deliver extremely brilliant and coherent X-ray beams, setting advanced requirements for the detection schemes used. Consequently, the detector development is aiming to an improved performance in terms of spatial resolution and...