International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2018)

Session

Pixel SOI, X-ray

(I)

11 Dec 2018, 09:00

Activity Center (Academia Sinica, Taipei)

34. Beam test results of an SOI monolithic pixel sensor SOFIST for the ILC vertex detector

Shun Ono (KEK)

11/12/2018, 09:00

Pixel for X-ray imaging

ORAL

The ILC experiment needs a vertex detector with satisfactory space and time resolutions to reconstruct decays of heavy flavor quarks and tau leptons for precise measurement of the Higgs boson and search for physics beyond the Standard Model. We have been developing a monolithic pixel detector for the ILC, SOFIST, with Silicon-on-Insulator technology; this is fabricated using a 200 nm FD-SOI...

74. Estimation and imaging of recoil electron with event-driven SOI sensor and deep learning in Compton imaging system

Xuan Hou (The University of Tokyo)

11/12/2018, 09:25

Pixel for X-ray imaging

ORAL

In conventional method of Compton imaging, only the information of gamma rays is used to estimate the location of radiation source. However, because of the information deficiency of recoil electrons occurred in Compton scattering process, signal-to-noise ratio (SNR) and angular resolution will be reduced. Recently, deep learning has become an increasingly important hot pot. With deep learning,...

36. Improvement and Evaluation of Event-driven Performance with Double-SOI Pixel Detectors for X-ray Astronomy

Dr Ayaki Takeda (University of Miyazaki)

11/12/2018, 09:50

Pixel for X-ray imaging

ORAL

We have been developing a monolithic active pixel sensor with the silicon-on-insulator (SOI) CMOS technology for use in future X-ray astronomical satellite missions. Our objective is to replace the X-ray Charge Coupled Device (CCD), which is the standard detector in the field, by offering high coincidence time resolution (∼ 50 ns), superior hit-position readout time (∼ 10 μs), and wide...

35. Evaluation of X-ray astronomical SOI CMOS pixel sensor aimed at improving charge-collection efficiency

Mr Masataka Yukumoto (University of Miyazaki)

11/12/2018, 10:15

Pixel for X-ray imaging

ORAL

We have been developing monolithic active pixel sensors for X-ray astronomy, referred to as "XRPIX", based on silicon-on-insulator (SOI) CMOS technology. Each pixel has a buried p-well (BPW) around sense node at the pixel center to suppress the back-gate effect. In our early device, XRPIX1b, charge-collection efficiency (CCE) was degraded because the in-pixel circuitry placed outside the BPW...

60. Results from test-beam measurements of monolithic pixel detectors in SOI technology

Marek Idzik (AGH University of Science and Technology (PL))

13/12/2018, 09:00

Pixel sensor technology

ORAL

Tracking and vertex detectors at future linear colliders such as CLIC require a high-precision position measurement. A single-point spatial resolution of about 3 microns is foreseen for the CLIC vertex detector. In order to achieve this goal, detectors with low material budget and small pitch have to be developed. One solution for this are monolithic pixel structures. These do not require...

37. Subpixel Response of Double-SOI Pixel Detectors for X-ray Astronomy

Kouichi Hagino

13/12/2018, 09:25

Pixel for X-ray imaging

ORAL

We have been developing the X-ray SOI (Silicon-On-Insulator) pixel detector named XRPIX for the future astrophysical satellites. XRPIX is a monolithic active pixel sensor composed of high-resistivity Si sensor, thin SiO2 insulator and CMOS pixel circuits by utilizing the SOI technology. Since XRPIX is capable of event-driven readout, it can achieve a high timing resolution better than ∼10 μs,...

49. Pushing the Limits of Kyoto's SOI Pixel Sensor for X-ray Astronomy with the Pinned Depleted Diode

Mr Kazuho Kayama (Kyoto University)

13/12/2018, 09:50

Pixel for X-ray imaging

ORAL

We have been developing SOI pixel sensors for X-ray astronomy, called “XRPIX", which are fabricated using the silicon-on-insulator CMOS technology.XRPIX aims to detect X-rays in the energy band from $ 0.5 ~\rm keV $ to $ 20 ~\rm keV $. The device consists of a fully depleted high-resistivity silicon sensor layer, a low-resistivity silicon layer for CMOS readout circuit, and a buried oxide...

10. X-ray imaging with high-Z sensors for the ESRF-EBS upgrade

Dr Stergios Tsigaridas (European Synchrotron Radiation Facility - ESRF)

13/12/2018, 10:15

Pixel for X-ray imaging

ORAL

The European Synchrotron Radiation Facility (ESRF) is being subjected to the second phase of its upgrade. Thanks to this upgrade, the new storage ring will be able to deliver extremely brilliant and coherent X-ray beams, setting advanced requirements for the detection schemes used. Consequently, the detector development is aiming to an improved performance in terms of spatial resolution and...