Description
In this contribution, we explore the possibility of using very thin LGAD (~ 20 microns thick) as tracking detector at very high fluences. Current silicon detectors generate signals at most of 1-2 fC: we believe that very thin LGAD can provide signals of this magnitude via the interplay of gain in the gain layer and gain in the bulk.
Up to fluences of 1-2E15 n/cm2, thin LGAD still have a gain of ~ 10 while at higher fluences the increased bias voltage will trigger the onset of multiplication on the bulk.
Key to this idea is the possibility of a reliable, high-density LGAD design able to hold large bias voltages (~ 500V)
Primary authors
Abraham Seiden
(University of California,Santa Cruz (US))
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
