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32nd RD50 Workshop (Hamburg)

from Monday 4 June 2018 (08:00) to Wednesday 6 June 2018 (17:00)
Hamburg (Auditorium)

        : Sessions
    /     : Talks
        : Breaks
4 Jun 2018
5 Jun 2018
6 Jun 2018
AM
10:00
Registration (until 10:30) (CSSB Auditorium)
10:30 --- Coffee Break ---
11:00 Welcome - Erika Garutti (Hamburg University (DE))  
11:10 RD50 – recent news - Michael Moll (CERN)  
11:20
Radiation Simulation Overview (until 11:50)
11:20 Overview of radiation simulation session at LHC inter-experiment workshop - Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL))  
11:50
Precision Timing Detectors I (until 12:30)
11:50 Recent Results with Ultra-Fast Silicon Detectors - Hartmut Sadrozinski (University of California,Santa Cruz (US))  
12:10 Effects of protons and neutrons irradiation to the gain layer and bulk of 50-micron thick FBK LGAD sensors doped with Boron, Boron Low diffusion, Gallium, Carbonated Boron and Carbonated Gallium - Marco Ferrero (Universita e INFN Torino (IT))  
09:00
CMOS Sensors (until 12:15)
09:00 CMOS Detectors Overview - Norbert Wermes (University of Bonn (DE))  
09:45 Design of high-speed front-ends for HV-MAPS within the CERN-RD50 collaboration - Mr Chenfan Zhang (University of Liverpool)  
10:05 Effect of thinning and backplane processing on charge collection of irradiated CMOS pixel detector structures - Igor Mandic (Jozef Stefan Institute (SI))  
10:25 --- Coffee Break ---
10:55 Charge collection and annealing studies on 800 MeV proton irradiated AMS H18 HV-CMOS sensors. - Carl William Holmkvist (Lancaster University (GB))  
11:15 DAQ development for the characterization of the RD50 HV-CMOS devices - Ricardo Marco Hernandez (CERN) Ricardo Marco-Hernández  
11:35 Status of HV-CMOS developments within the RD50 collaboration - Eva Vilella Figueras (University of Liverpool (GB))  
11:55 Discussion - Eva Vilella Figueras (University of Liverpool (GB))  
09:00 High-Density Low Gain Avalanche Detectors (HD-LGAD) - Giovanni Paternoster (Fondazione Bruno KEssler)  
09:20
Defect and Material Characterization (until 13:00)
09:20 Measurements of NitroStrip detectors irradiated with 23MeV protons - Marta Baselga Bacardit (KIT - Karlsruhe Institute of Technology (DE))  
09:40 Forward and reverse current of highly irradiated silicon pad diodes - Christian Scharf (Hamburg University (DE))  
10:00 FORMATION AND ELIMINATION OF RADIATION DEFECTS RESPONSIBLE FOR CHARGE CARRIER REMOVAL IN BORON DOPED SILICON - Leonid Makarenko (Belarusian state University)  
10:20 Characterization of acceptor removal in silicon pad diodes irradiated by protons and neutrons - Pedro Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT))  
10:40 --- Coffee Break ---
11:10 A parametrization of initial acceptor removal - Nicolo Cartiglia (INFN Torino (IT))  
11:30 Application of p-i-n photodiodes to charged particle fluence measurements beyond 10^15 1-MeV-neutron-equivalent/cm^2 - Aidan Grummer (University of New Mexico (US))  
11:50 First measurements with silicon detectors irradiated above 3e17 n/cm2 - Igor Mandic (Jozef Stefan Institute (SI))  
12:10 Proposal for RD50 common project Mobility of carriers in irradiated Silicon - Prof. Juozas Vaitkus (Vilnius University (LT)) Juozas Vaitkus (Vilnius University )  
12:30 Discussion - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)  
PM
12:30 --- Lunch Break ---
13:30
Precision Timing Detectors II (until 15:00)
13:30 A novel HV silicon JFET for ATLAS and other silicon R&D activities at BNL - Dr Gabriele Giacomini (Brookhaven National Lab)  
13:50 Performance of thin LGADs after long term annealing - Gregor Kramberger (Jozef Stefan Institute (SI))  
14:10 CNM activities on LGADs for ATLAS/CMS Timing Layers - Dr Salvador Hidalgo (Centro Nacional de Microelectrónica (IMB-CNM-CSIC))  
14:30 Discussion - Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))  
15:00
Device Simulation (until 17:30)
15:00 TCAD Process and device simulation of OVERMOS, a CMOS 180nm MAPS detector - Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))  
15:20 ILGAD TCAD Simulations - Prof. Fco.Rogelio Palomo Pinto (Dept. Ingeniería Electrónica, Escuela Técnica Superior de Ingenieros, Universidad de Sevilla)  
15:40 --- Coffee Break ---
16:10 A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation - Dr Joern Schwandt (Hamburg University (DE))  
16:30 Overview of sensor simulation session at LHC inter-experiment workshop - Ben Nachman (University of California Berkeley (US))  
17:00 Discussion - Joern Schwandt (Hamburg University (DE))  
17:30
Collaboration Board (until 19:30)
12:15 Very thin LGAD for tracking particles at fluences above 5E15 n/cm2  
12:35 --- Lunch Break ---
14:00
Pixel and Strip Sensors (until 16:50)
14:00 Overview of sensor measurements session at LHC inter-experiment workshop - Aidan Grummer (University of New Mexico (US))  
14:30 Comparative investigation of irradiated small-pitch 3D strip detectors - Maria Manna (Centro National de Microelectronica - CNM-IMB-CSIC)  
14:50 Charge Collection Efficiency of proton-irradiated small-cell 3D strip sensors up to 1.7E16 neq/cm2 equivalence fluence - Andrea Garcia Alonso (Universidad de Cantabria (ES)) Mrs Andrea García Alonso (IFCA)  
15:10 Front-side biasing of n-in-p silicon strip detectors - Alexander Dierlamm (KIT - Karlsruhe Institute of Technology (DE))  
15:30 --- Coffee Break ---
16:00 Charge multiplication in irradiated sensors after long annealing times - Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))  
16:20 Discussion - Gregor Kramberger (Jozef Stefan Institute (SI))  
17:00
Visit to the International Maritime Museum (until 19:00)
19:00
Symposium (until 20:00)
19:00 A Brief History of the RD50 Collaboration - Michael Moll (CERN)  
19:20 Highlights of Silicon microscopic defects spectroscopy - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)  
19:40 Highlights of Eckhart career - Gunnar Lindstroem  
20:00
Workshop Dinner (until 23:00)
13:00 --- Lunch Break ---
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