32nd RD50 Workshop (Hamburg)

Session

CMOS Sensors

5 Jun 2018, 09:00

Deck 10 (International Maritime Museum, Hamburg)

31. CMOS Detectors Overview

Norbert Wermes (University of Bonn (DE))

05/06/2018, 09:00

6. Design of high-speed front-ends for HV-MAPS within the CERN-RD50 collaboration

Mr Chenfan Zhang (University of Liverpool)

05/06/2018, 09:45

The High Voltage-Monolithic Active Pixels Sensors (HV-MAPS) detector technology is a promising candidate for particle physics experiments. While standard hybrid sensors require bump-bonding or gluing to assemble the sensor and the readout electronics together, fully monolithic HV-MAPS allow integrating these parts onto one single chip, which makes them more cost-efficient especially for...

10. Effect of thinning and backplane processing on charge collection of irradiated CMOS pixel detector structures

Igor Mandic (Jozef Stefan Institute (SI))

05/06/2018, 10:05

Two sets of passive CMOS detectors were studied: thinned with processed and metalized backplane and not thinned without backplane processing with substrate biased through the implant on top of the device. Detectors were irradiated with neutrons in reactor in Ljubljana. Collected charge was measured with electrons from Sr-90 source using an external amplifier. Depletion depth and charge...

29. Charge collection and annealing studies on 800 MeV proton irradiated AMS H18 HV-CMOS sensors.

Carl William Holmkvist (Lancaster University (GB))

05/06/2018, 10:55

With the upcoming HL-LHC upgrade, there is ongoing investigations on the viability of HV-CMOS sensors for the upgrade of the ATLAS pixel detector. The HV-CMOS technology is showing great promise, however, a drawback in the standard process is the use of low resistivity silicon (10 - 20 Ωcm) wafers, as this commonly only provides a rather small depletion region before breakdown voltage is...

4. DAQ development for the characterization of the RD50 HV-CMOS devices

Ricardo Marco-Hernández, Ricardo Marco Hernandez (CERN)

05/06/2018, 11:15

This contribution will describe the developments foreseen for the characterization of the RD50 MPW1 HV-CMOS monolithic pixel sensors implemented in the LFoundry 150 nm technology in the framework of the RD50 collaboration. A custom board to accommodate the RD50 MPW1 device under test is being designed. This board will be fully compatible with the CaR (Control and Readout) interface board used...

17. Status of HV-CMOS developments within the RD50 collaboration

Eva Vilella Figueras (University of Liverpool (GB))

05/06/2018, 11:35

Following from work in the wider community, specific High Voltage-CMOS (HV-CMOS) developments within the RD50 collaboration have started with a small test prototype (RD50-MPW1) in the 150 nm HV-CMOS technology from LFoundry S.r.l. The prototype, manufactured using mid (500 Ω·cm) and high (1.9 kΩ·cm) resistivity substrates, integrates two fully monolithic matrices of pixels and test structures...

36. Discussion

Eva Vilella Figueras (University of Liverpool (GB))

05/06/2018, 11:55