32nd RD50 Workshop (Hamburg)

Session

Pixel and Strip Sensors

5 Jun 2018, 14:00

Deck 10 (International Maritime Museum, Hamburg)

7. Overview of sensor measurements session at LHC inter-experiment workshop

Aidan Grummer (University of New Mexico (US))

05/06/2018, 14:00

Overview of the sensor measurements session at the CERN workshop 23-24 April 2018 on Radiation Effects at the LHC experiments and Impact on Operation and Performance

19. Comparative investigation of irradiated small-pitch 3D strip detectors

Maria Manna (Centro National de Microelectronica - CNM-IMB-CSIC)

05/06/2018, 14:30

The HL-LHC is expected to reach luminosities of up to 3000 fb−1; the upgrade of innermost tracking detectors of the ATLAS experiment foresees a decrease in pixel size in order to enhance the positional resolution. In this talk, the collected charge characterisation of different pixel size geometry will be presented. Following irradiation, sensors with 50μm×50μm pixel size show higher charge...

22. Charge Collection Efficiency of proton-irradiated small-cell 3D strip sensors up to 1.7E16 neq/cm2 equivalence fluence

Mrs Andrea García Alonso (IFCA), Andrea Garcia Alonso (Universidad de Cantabria (ES))

05/06/2018, 14:50

A study of Silicon strip 3D sensors of sizes 50 um x 50 um and 25 um x 100 um, fabricated at CNM using double-sided technology is shown. Sensors are wire-bonded to ALIBAVA read-out system. Results about charge collection of non irradiated sensors are presented, and also irradiated up to fluences of 1.7E16. The response of the sensors in both a test beam of 120 GeV protons and pions, and...

25. Front-side biasing of n-in-p silicon strip detectors

Alexander Dierlamm (KIT - Karlsruhe Institute of Technology (DE))

05/06/2018, 15:10

Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is...

27. Charge multiplication in irradiated sensors after long annealing times

Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))

05/06/2018, 16:00

In previous studies we presented results on long term annealing studies in irradiated p-type sensors until charge multiplication occurred.
Recently we carried out a deeper investigation on the charge multiplication phenomena of the annealed sensor, in particular its instability. We will show how it depends on bias voltage cycling and (less) on temperature. One sensor irradiated with neutrons...

34. Discussion

Gregor Kramberger (Jozef Stefan Institute (SI))

05/06/2018, 16:20