Nitrogen enrich material showed an improvement of some defects after irradiation. NitroStrip is an RD50 project that aims to compare nitrogen enriched silicon wafers with FZ, DOFZ and MCz material. This presentation will show CCE measurements and electrical characterization of NitroStrip samples irradiated at different fluences with 23MeV protons.
The current of initially p- and n-type bulk silicon pad diodes has been studied for low and high forward and reverse bias voltages at -30 °C. The diodes were irradiated to neutron equivalent fluences $\Phi_{eq}>10^{15}~\text{cm}^{-2}$ with GeV protons.
At low bias voltages, the current is ohmic. The neutral bulk of highly irradiated diodes has approximately zero net fixed space charge and...
When irradiated with fast particles, the radiation damage associated with the removal of charge carriers in n-type silicon (n-Si) is mainly due to the formation of vacancy-type defects (divacancy, A and E centers). In p-Si, an important role in the removal of charge carriers is related with interstitial defects. The appearance of silicon interstitial atoms induced by irradiation initiates a...
Acceptor removal has been studied on p-type silicon sensors irradiated with protons and neutrons up to 7E15 $n_{eq}/cm^2$. Two sets of diodes were used: thin epitaxial diodes with different resistivities (10, 50, 250 and 1000 Ohm cm) and high resistivity float zone diodes with different thicknesses (100, 150, 200 and 285 um).
CV and IV measurements were performed to extract the effective...
In this brief talk I will present the available data on Initial acceptor removal and propose a simple parameterization to explain the basic feature of the data.
Methods are developed for the application of forward biased p–i–n photodiodes to measurements of charged particle fluence beyond 10^15 1-MeV-neutron-equivalent/cm^2. An order of magnitude extension of the regime where forward voltage can be used to infer fluence is achieved for OSRAM BPW34F devices.
Silicon detectors were recently irradiated with reactor neutrons up to fluence of 3e17 n/cm2. The irradiated samples include detectors previously irradiated with 1.6E17 n/cm2 so these were exposed to total of 4.6E17 n/cm2. Measurements have just started and first results will be presented in this contribution.
