32nd RD50 Workshop (Hamburg)

Session

Defect and Material Characterization

6 Jun 2018, 09:20

Auditorium (Hamburg)

5. Measurements of NitroStrip detectors irradiated with 23MeV protons

Marta Baselga Bacardit (KIT - Karlsruhe Institute of Technology (DE))

06/06/2018, 09:20

Nitrogen enrich material showed an improvement of some defects after irradiation. NitroStrip is an RD50 project that aims to compare nitrogen enriched silicon wafers with FZ, DOFZ and MCz material. This presentation will show CCE measurements and electrical characterization of NitroStrip samples irradiated at different fluences with 23MeV protons.

18. Forward and reverse current of highly irradiated silicon pad diodes

Christian Scharf (Hamburg University (DE))

06/06/2018, 09:40

The current of initially p- and n-type bulk silicon pad diodes has been studied for low and high forward and reverse bias voltages at -30 °C. The diodes were irradiated to neutron equivalent fluences $\Phi_{eq}>10^{15}~\text{cm}^{-2}$ with GeV protons.

At low bias voltages, the current is ohmic. The neutral bulk of highly irradiated diodes has approximately zero net fixed space charge and...

24. FORMATION AND ELIMINATION OF RADIATION DEFECTS RESPONSIBLE FOR CHARGE CARRIER REMOVAL IN BORON DOPED SILICON

Leonid Makarenko (Belarusian state University)

06/06/2018, 10:00

When irradiated with fast particles, the radiation damage associated with the removal of charge carriers in n-type silicon (n-Si) is mainly due to the formation of vacancy-type defects (divacancy, A and E centers). In p-Si, an important role in the removal of charge carriers is related with interstitial defects. The appearance of silicon interstitial atoms induced by irradiation initiates a...

28. Characterization of acceptor removal in silicon pad diodes irradiated by protons and neutrons

Pedro Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT))

06/06/2018, 10:20

Acceptor removal has been studied on p-type silicon sensors irradiated with protons and neutrons up to 7E15 $n_{eq}/cm^2$. Two sets of diodes were used: thin epitaxial diodes with different resistivities (10, 50, 250 and 1000 Ohm cm) and high resistivity float zone diodes with different thicknesses (100, 150, 200 and 285 um).
CV and IV measurements were performed to extract the effective...

37. A parametrization of initial acceptor removal

Nicolo Cartiglia (INFN Torino (IT))

06/06/2018, 11:10

In this brief talk I will present the available data on Initial acceptor removal and propose a simple parameterization to explain the basic feature of the data.

3. Application of p-i-n photodiodes to charged particle fluence measurements beyond 10^15 1-MeV-neutron-equivalent/cm^2

Aidan Grummer (University of New Mexico (US))

06/06/2018, 11:30

Methods are developed for the application of forward biased p–i–n photodiodes to measurements of charged particle fluence beyond 10^15 1-MeV-neutron-equivalent/cm^2. An order of magnitude extension of the regime where forward voltage can be used to infer fluence is achieved for OSRAM BPW34F devices.

13. First measurements with silicon detectors irradiated above 3e17 n/cm2

Igor Mandic (Jozef Stefan Institute (SI))

06/06/2018, 11:50

Silicon detectors were recently irradiated with reactor neutrons up to fluence of 3e17 n/cm2. The irradiated samples include detectors previously irradiated with 1.6E17 n/cm2 so these were exposed to total of 4.6E17 n/cm2. Measurements have just started and first results will be presented in this contribution.

39. Proposal for RD50 common project Mobility of carriers in irradiated Silicon

Prof. Juozas Vaitkus (Vilnius University (LT)), Juozas Vaitkus (Vilnius University )

06/06/2018, 12:10

35. Discussion

Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

06/06/2018, 12:30