We present a High-Voltage vertical JFET, conceived as a candidate for the High-Voltage Multiplexing switch in the ATLAS upgrade of the silicon microstrip Inner Tracker (ITk). Both n-type and p-type HV-JFETs have been successfully fabricated in the silicon processing facility of Brookhaven National Lab. Probe station measurements of un-irradiated devices show low leakage currents and high...
Thin LGAD detectors from CNM were irradiated with neutrons to 6e14 and 3e15 cm-2 and annealed in steps up to 10000 min at 60C. After each annealing step charge collection and leakage currents were measured to determine gain, break-down performance and evolution of leakage currents. It was found that apart from leakage current which decreases with annealing in accordance with expectations the...
We will present the last technological developments at CNM on LGAD detectors for ATLAS HGTD and CMS ETL. In this sense, we will summarize the actual status of the new AIDA2020 fabrication run to integrate thin LGADs in 4-inches, 35 and 50 microns thick, silicon on silicon wafers, showing a description of the integrated structures in the mask set and a summary of the fabrication process. In...
