32nd RD50 Workshop (Hamburg)

Session

Precision Timing Detectors II

4 Jun 2018, 13:30

Auditorium (Hamburg)

15. A novel HV silicon JFET for ATLAS and other silicon R&D activities at BNL

Dr Gabriele Giacomini (Brookhaven National Lab)

04/06/2018, 13:30

We present a High-Voltage vertical JFET, conceived as a candidate for the High-Voltage Multiplexing switch in the ATLAS upgrade of the silicon microstrip Inner Tracker (ITk). Both n-type and p-type HV-JFETs have been successfully fabricated in the silicon processing facility of Brookhaven National Lab. Probe station measurements of un-irradiated devices show low leakage currents and high...

26. Performance of thin LGADs after long term annealing

Gregor Kramberger (Jozef Stefan Institute (SI))

04/06/2018, 13:50

Thin LGAD detectors from CNM were irradiated with neutrons to 6e14 and 3e15 cm-2 and annealed in steps up to 10000 min at 60C. After each annealing step charge collection and leakage currents were measured to determine gain, break-down performance and evolution of leakage currents. It was found that apart from leakage current which decreases with annealing in accordance with expectations the...

12. CNM activities on LGADs for ATLAS/CMS Timing Layers

Dr Salvador Hidalgo (Centro Nacional de Microelectrónica (IMB-CNM-CSIC))

04/06/2018, 14:10

We will present the last technological developments at CNM on LGAD detectors for ATLAS HGTD and CMS ETL. In this sense, we will summarize the actual status of the new AIDA2020 fabrication run to integrate thin LGADs in 4-inches, 35 and 50 microns thick, silicon on silicon wafers, showing a description of the integrated structures in the mask set and a summary of the fabrication process. In...

32. Discussion

Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))

04/06/2018, 14:30