33rd RD50 Workshop (CERN)

Session

Device Simulation

27 Nov 2018, 14:10

6/2-024 - BE Auditorium Meyrin (CERN)

Conveners

Device Simulation

• Joern Schwandt (Hamburg University (DE))

2. Charge collection test and TCAD simulation of OVERMOS, a CMOS 180nm MAPS detector

Dr E. Giulio Villani (STFC Rutherford Appleton Laboratory), Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB)), Enrico Giulio Villani (STFC - Science & Technology Facilities Council (GB)), Giullio villani (Rutherford Appleton Laboratory)

27/11/2018, 14:10

We will present results of charge collection of OVERMOS, a high resistivity TJ 180nm CMOS MAPS, obtained using 1064 nm calibrated laser source.
Result include charge collection over pixel region, sampled with 5 um resolution, and charge collection time. Test results are compared with 3D TCAD optical simulations, taking into account SiO2 and CoSi2 attenuation.

4. Status on TRAMOS (Trapping MOS) and DotPix (QuantumDot Pixel) ongoing developments

Dr Nicolas Fourches (IRFU/DEDIP/DePhyS CEA Saclay)

27/11/2018, 14:30

Abstract: The DotPix project is the result of several attempts to design a new kind of pixel for inner vertex detectors arrays with enhanced point-to-point resolution. As experiments include the DEPleted FET (DEPFET) based detector or monolithic pixels, it is now important to design a pixel based on a single device, which can reach a resolution below the micron with reduced thicknesses...

33. Discussion

Joern Schwandt (Hamburg University (DE)), Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR)), Marco Bomben (U. di Trieste)

27/11/2018, 14:50