34th RD50 Workshop (Lancaster)

TCT measurements of the H35DEMO HV-CMOS detector by ams

14 Jun 2019, 11:00

20m

Cavendish Lecture Theatre, Faraday Building (Lancaster University)

CMOS Sensors

Speaker

Ettore Zaffaroni (Universite de Geneve (CH))

Description

TCT measurements have been performed on the H35DEMO chip, a HV-CMOS sensor produced by ams in H35 350 nm technology, before and after proton and neutron irradiation. The proton irradiation has been performed at the Bern Inselspital cyclotron (18 MeV) and at the Proton Syncrotron at CERN (24 GeV) up to more than $10^{15}$ 1 MeV $n_\mathrm{eq}/\mathrm{cm}^2$. The neutron irradiation has been performed at the Jožef Stefan Institute reactor in Ljubljana up to $2\cdot 10^{15}$ 1 MeV $n_\mathrm{eq}/\mathrm{cm}^2$.
The depletion depth of sensors built on substrates of various resistivities has been measured, along with timing characteristics of the current pulses. Measurement technique, data analysis and results will be presented.

Presentation materials

zaffaroni_rd50.pdf