Description
In parallel to the impending upgrade of the LHC towards the High Luminosity LHC, a Monolithic Active Pixel Sensor is being developed to withstand the higher radiation environment foreseen. This novel sensor makes use of a 180 nm TowerJazz CMOS imaging technology process featuring small collection electrode designs and small pixel sizes of 3 um and 36.4 um, respectively. These sensors can be depleted with a relatively low bias voltage. In this contribution, efficiency measurements obtained through test-beam campaigns at ELSA and DESY will be presented along with a focus on the performance of chips with extra process modifications, including those produced on Czochralski substrate, both before and after irradiation up to 2E15 neq/cm2.
Primary author
Abhishek Sharma
(University of Oxford (GB))
