The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100 μm and 130 μm active thickness, for planar sensors, and 130 μm for 3D sensors, the thinnest ones ever produced so far. Prototypes of hybrid modules have been bump-bonded to the RD53A readout chip. The RD53A readout chip...
The R&D programme of the proposed Compact Linear Collider (CLIC) aims to fulfil the ambitious requirements of the inner detectors. This contribution provides an overview of these innovative technology studies, with an emphasis upon recent results and developments. Various monolithic prototypes are currently being investigated for the tracking detector in High-Voltage CMOS, High-Resistivity...
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence of 1-5_1015 1 MeV...
Detectors based on Chemical Vapor Deposition (CVD) diamond have been used successfully in beam conditions monitors in the highest radiation areas of the LHC. Future experiments at CERN will to accumulate an order of magnitude larger fluence. As a result, an enormous effort is underway to identify detector materials that will operate after fluences of >10^{16}/cm^2.
Diamond is one candidate...
A high rate beam telescope based on the Timepix3 ASIC has been built in order to perform detailed studies of tracking prototypes using charged particle beams. The telescope is optimised for spatial precision, reaching $<$ 1.6 $\mu$m pointing resolution. Timepix3 features per pixel TDCs with a bin size of $\approx$, and after detailed systematic correction, a temporal precision of 680 (270) ps...
The time information assigned to each track will enable the use of 4D reconstruction algorithms and will further discriminate in the time domain interaction vertices within the same bunch crossing to recover the track purity of vertices in current LHC conditions. The endcap region of the MTD, called the Endcap Timing Layer (ETL) will be instrumented with silicon-based low gain avalanche...
The HADES collaboration [1] at GSI Darmstadt, Germany, is developing a new T0 and beam tracking system based on the Low Gain Avalanche Diodes (LGAD) [3,4], aka Ultra Fast Silicon Detectors (UFSD).
The group has prepared a demonstration system realized as a beam telescope consisting of two UFSD strip sensors with size of about 5mm x 5mm and the strip structure with a 140 µm pitch. They are...
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors (20 to 50 $\mu m$ in thickness) with moderate gain (up to ~50). LGADs have good time resolution (~17 ps), fast rise time (~500ps), and short full charge collection time (~1ns), which are suitable for numerous future applications.
The first implementation of LGADs will be with the ATLAS and CMS detectors in preparation for the...
In parallel to the impending upgrade of the LHC towards the High Luminosity LHC, a Monolithic Active Pixel Sensor is being developed to withstand the higher radiation environment foreseen. This novel sensor makes use of a 180 nm TowerJazz CMOS imaging technology process featuring small collection electrode designs and small pixel sizes of 3 um and 36.4 um, respectively. These sensors can be...
A promising approach to increase the radiation hardness of existing detector designs are defect engineering and the dedicated and controlled enrichment of the silicon bulk with foreign atoms. NitroStrip is a RD50 project with the goal of understanding the effect of nitrogen enrichment on the radiation hardness of high resistivity float zone silicon.
Previous works suggest an increased...
As nuclear and particle physics facilities move to higher intensities, the detectors used there must be more radiation tolerant. Diamond is in use at many facilities due to its inherent radiation tolerance and ease of use. We will present radiation tolerance measurements of the highest quality poly-crystalline Chemical Vapor Deposition (pCVD) diamond material for irradiations from a range of...
The increase in instantaneous luminosity at the HL-LHC experiments will have a severe impact on event reconstruction. Original tracking capabilities could however be restored by measuring tracks with picosecond precision. The TIMESPOT Collaboration is developing innovative 3D pixel with the aim to build a demo mini-tracker using 55µm x 55µm silicon pixels with a time resolution below 50ps. A...
Future experiments in particle physics foresee few-micrometer single-point position resolution in their silicon vertex detectors, motivated by e.g. b- and light-quark-tagging capabilities. Instead of scaling down pitch sizes, our sensor concept seeks to improve the position resolution by using a dedicated charge sharing mechanism. In enhanced lateral drift (ELAD) sensors, this mechanism...
The DePFET is an active pixel sensor first introduced in 1987 (Kemmer&Lutz NIMA 1987) and is utilized in and suggested for experiments in astrophysics, planetary exploration as well as particle physics. The DePFET is essentially a pMOSFET built on a high resistive, fully depleted bulk. A deep-n implant beneath the MOS-gate forms a positive potential. Electrons are collected in this “internal...
The concept of digital calorimetry relies on measuring the number of particles in a shower rather than the energy they deposit. Ultra highly granular calorimeters are required to ensure that there is one particle per cell per readout cycle to avoid saturation effects. A small sensor prototype has been designed and fabricated in the TowerJazz 180 nm CMOS imaging process, using high resistivity...
The ATLAS Inner Tracker (ITk) will be installed for the High Luminosity upgrade of the LHC (HL-LHC) as replacement for the existing Inner Detector. The total supply comprises about 14,800 high-quality, radiation tolerant Si planar n-on-p pixel sensors modules. The sensors will be flip chip bonded against new ATLAS read-out chips made with 65 nm CMOS technology. The pixel pitch is either 50x50...
