24–29 May 2020 Postponed
America/Vancouver timezone

Design and simulation on depleted HVCMOS 50μm×50μm sensor using 150 nm CMOS technology for particle detector

25 May 2020, 16:00
7h 58m
Poster Sensors Poster

Speaker

Dr Mei Zhao (Chinese Academy of Sciences (CN))

Description

Monolithic particle detector is expected to be used in ATLAS upgrade project and CEPC. Results of monolithic chip with pixel size 250μm×50μm designed by CPPM using LFoundry 150nm technology show that the depleted HVCMOS sensor has good performance on particle detecting. To improve the spatial resolution, the research work of sensors with small pixel size of 50μm×50μm was performed, and its performance was simulated and optimized by using Sentaurus TCAD tools. By using one Dnwell electrode and reducing the area of Dnwell, the size of the sensor can be reduced to 50μm×50μm. The output capacitance of sensor will be improved from 280fF to less than 15fF. The depleted area of the sensor can be adjusted by applying high voltage from top Dnwell electrode and backside, but the total voltage that can be applied to the sensor is affected by the distance between two Dnwells. And sensor’s performance after irradiation was simulated. The design of new sensor with different parameters was finished.

Authors

Dr Mei Zhao (Chinese Academy of Sciences (CN)) XIAOSHAN JIANG (I) Wei Wei (IHEP, CAS, China) Marlon B. Barbero (CPPM, Aix-Marseille Université, CNRS/IN2P3 (FR)) Prof. Patrick Panguad (Centre de Physique des Particules de Marseille) Dr Zongde Chen (Centre de Physique des Particules de Marseille)

Presentation materials

There are no materials yet.