Description
We fabricated a pixelated silicon sensor with junction field effect transistor (JFET) on a 650 μm-thick, high resistivity (> 5 kΩ·cm) n-type and double-sided polished 6-inch silicon wafer using double-sided fabrication process. The JFET with cylindrical structure acts as a switch to readout charges accumulated in the pixelated sensor. We presented electrical characteristics of the fabricated pixelated silicon sensors integrated with the JFET with a size of 100x100 um2. The drain currents as a function of the drain voltage for different the gate voltages were measured to verify the performance of the JFET as a switch and we determined the optimized design parameters of the pixelated sensor to provide the proper functioning of the switch. LEDs and X-rays were irradiated to the fabricated pixelated silicon sensor integrated with the JFET to measure the sensor's response and the results were also presented.
