Conveners
Monolithic I
- Daniela Bortoletto (University of Oxford (GB))
- Toshinobu Miyoshi (KEK)
SOI wafer consists of high-resistive handle wafer and CMOS LSI circuit layer, and these two layers are isolated by Silicon oxide layer. The handle wafer corresponds to radiation sensor.
Produced charges in the sensor are readout through a tungsten via to the circuit. Sensor thickness can be changed from 500 to 50 um according to application. It satisfy both of a complex circuit implementation...
Depleted Monolithic Active Pixel Sensors (DMAPS) using commercial CMOS and High-Voltage CMOS (HV-CMOS) processes are one of the main candidate technologies for future tracking detectors in high luminosity colliders. Its capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity. They are suitable for...
The development of radiation hard Depleted Monolithic Active Pixel Sensors (DMAPS) targets the replacement of hybrid pixel detectors to meet radiation hardness requirements of at least 1.5E16 1 MeV neq/cm2 for the HL-LHC and beyond.
DMAPS were designed and tested in the TJ180nm TowerJazz CMOS imaging technology with small electrodes pixel designs. This technology reduces costs and provides...
Depleted CMOS Active Pixel Sensors (DMAPS) provide interesting solutions in environments where timing precision and radiation tolerance are needed, by achieving a sizable fully depleted sensitive layer with strong drift field. They also have the advantage of using commercial processes and do not need hybridization, which eases production at relatively low cost. Developments have recently...
