This contribution will be focused on the lab performance evaluation of the electrical parameters before irradiation of three different blocks of the RD50-MPW2 device, the 8 by 8 matrix of depleted monolithic active pixel sensors, the bandgap voltage reference and the SEU (Single Event Upset) tolerant memory array. The RD50-MPW2 was developed in the framework of the RD50 collaboration and implemented in the 150 nm HV-CMOS process of LFoundry. The device was submitted for fabrication in January of 2019 and the first samples received in February of 2020. In first place, a reminder of the main characteristics of the aforementioned RD50-MPW2 circuits will be carried out. Secondly, the different tests performed in order to verify and characterize the pixel analog readout electronics, the configuration and bias registers as well as the analog multiplexer will be described. Measured results corresponding to input charge generated both with the pixel injection circuit and radioactive sources will be displayed. In third place, the measurements to assess the bandgap output voltage stability against the input voltage will be presented. Finally, preliminary lab measurements of the Single-Event tolerant memory array of the chip will be also showed.