Speaker
Moritz Oliver Wiehe
(Albert Ludwigs Universitaet Freiburg (DE))
Description
The Transient Current Technique (TCT) has become a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon devices with unprecedented spatial resolution. Currently the first compact TPA-TCT setup is under development at CERN. The current status of the setup and methods for characterizing the spatial beam profile are presented.
Primary authors
Moritz Oliver Wiehe
(Albert Ludwigs Universitaet Freiburg (DE))
Michael Moll
(CERN)
Marcos Fernandez Garcia
(Universidad de Cantabria and CSIC (ES))
Isidre Mateu
(CERN)
Raul Montero
(UPV/EHU)
Francisco Rogelio Palomo Pinto
(Universidad de Sevilla (ES))
Ivan Vila Alvarez
(Instituto de Física de Cantabria (CSIC-UC))
