Speaker
Description
Two current-based microscopic analysis methods - TSC and I-DLTS - with current injection and/or optical filling (in development) were recently and effectively used by CERN RD50 Acceptor Removal project group as reciprocal tools in the investigation of highly irradiated p-type silicon sensors and their related radiation hardness study aiming to understand and parametrise the existing acceptor removal problem. For such devices, defect filling has become a major issue in the defect identification, for which the contest between filling and emission processes, but also - competition and interaction among various defect levels have been carefully examined and taken into account. For several detected defect levels including the two of the main interest - BiOi and CiOi, the clear dependence between the filling conditions (Tfill, tfill, UP), but also Vbias and Nt concentration was ascertained, which makes the problem of acceptor removal parameterisation extremely difficult to solve. The optimised protocol in defect filling conditions as well as a quantitative analysis of the I-DLTS, C-DLTS and TSC results on electron irradiated PiN diode as an example will be discussed.
