Speaker
Dr
Tao Yang
(Chinese Academy of Sciences (CN))
Description
To explore the timing performance of the wide bandgap semiconductor devices, we measured the time resolution of 100 um 4H-SiC PIN device manufactured in China using the beta source and LGAD as reference. A simulation has been carried out to investigate the timing performance. We also reported the prospects of 4H-SiC with gain layer structure (LGAD) using the TCAD simulation.
Primary authors
Dr
Tao Yang
(Chinese Academy of Sciences (CN))
Yuhang Tan
(Chinese Academy of Sciences (CN))
Xin Shi
(Chinese Academy of Sciences (CN))
