Speaker
Description
This project focuses on the investigation of radiation damage of epitaxial p-type silicon.
Various test structures consisting of Schottky diodes and pn-junctions of different size and flavors have been fabricated at different facilities, including RAL and Carleton University. The structures are fabricated on a 6-inch wafer of various doping (1e13, 1e14, 1e15, 1e16, and 1e17 B cm-3) and 50 µm thick epitaxial layer.
Updates and details on the first batch of fabricated devices on high and medium resistivity wafers will be given. Test results obtained so far - and cross-checked between institutes - will be shown. Some initial approaches on how to reduce the surface component of the leakage current that could potentially be applicable to the foreseen irradiated sample measurements will also be discussed. Furthermore, details of the ongoing Synopsys TCAD simulation will be provided.
Finally, the progressing activities for the next round of wafer processing and proposed plans for irradiation with protons/neutrons in the coming months, will be reviewed.
