Speaker
Description
CMOS process lines are an attractive option for the fabrication of hybrid pixel sensors for large-scale detectors like the ATLAS and CMS detectors. Besides the cost-effectiveness and high throughput of commercial CMOS lines, multiple features like poly-silicon layers, metal-insulator-metal capacitors and several metal layers are available to enhance the sensor design.
After an extensive R&D programme with several prototype sensors using the 150 nm LFoundry technology, passive CMOS pixel sensors have been manufactured for the first time as full-size sensors compatible with the RD53 readout chips.
This presentation will focus on IV-curve measurements and the characterization of the full-size sensors, before and after irradiation to fluences of $2×10^{15}$ neq/cm² and $5×10^{15}$ neq/cm², using a minimum ionising electron beam. The measured hit-detection efficiency after a fluence of $5×10^{15}$ neq/cm² is larger than 99 %.
