Feb 21 – 25, 2022
Vienna University of Technology
Europe/Vienna timezone

Radiation damage investigation of epitaxial p-type silicon using Schottky and pn-junction diodes

Not scheduled
Vienna University of Technology

Vienna University of Technology

Gusshausstraße 27-29, 1040 Wien
Recorded Presentation Semiconductor Detectors


Christoph Thomas Klein (Carleton University (CA))


This project focuses on the investigation of trap energy levels introduced by radiation damage in epitaxial p-type silicon. Using 6-inch wafers of various boron doping concentrations (1e13, 1e14, 1e15, 1e16, and 1e17 cm-3) with a 50 µm epitaxial layer, multiple iterations of test structures consisting of Schottky and pn-junction diodes of different sizes and flavours are being fabricated at RAL and Carleton University.

In this talk, details on the diode fabrication and electrical measurements of the structures will be given. IV and CV scans of fabricated test structures have been performed and cross-checked between institutes, the results of which will be presented. Emphasis will be placed on approaches to reduce the surface component of the leakage current that could potentially be applicable to the foreseen irradiated sample measurements.
Furthermore, trap parameters obtained from Deep-Level Transient Spectroscopy (DLTS) and Thermal Admittance Spectroscopy (TAS) as well as process and electrical simulations of the diodes fabricated from the high resistivity wafer will be shown.

Finally, the on-going activities for the next round of wafer processing and proposed plans for irradiation in the coming months, will be reviewed.

Primary experiment RD50

Primary author

Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))


Christoph Thomas Klein (Carleton University (CA)) Thomas Koffas (Carleton University (CA)) Garry Tarr (Carleton University (CA)) Robert Vandusen (Carleton University (CA)) Philip Patrick Allport (University of Birmingham (UK)) Laura Gonella (University of Birmingham (UK)) Ioannis Kopsalis (University of Birmingham (GB)) Igor Mandic (Jozef Stefan Institute (SI)) Fergus Wilson (Science and Technology Facilities Council STFC (GB)) Yebo Chen (IHEP (CN)) Peilian Liu (IHEP (CN))

Presentation materials