Speaker
Mr
Joseph Cullen
(School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland)
Description
The results of photoluminescence (PL) studies on ZnO implanted with radioactive As → Ge and Ga → Ge isotopes are described. In both cases, identical PL effects are observed, indicating that identical daughter Ge defects are created. We conclude, on the basis of the well-established result that Ga occupies Zn sites, that implanted As also occupies Zn sites in ZnO. This finding corroborates results from electron channeling measurements by Wahl et al [Physica B 404, 4803(2009)]. Preliminary indications from this work and allied studies of stable isotopes are that both Ge and Si act as weak binding centres for excitons in ZnO.
Author
Mr
Joseph Cullen
(School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland)
Co-authors
Dr
Enda McGlynn
(School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland)
Dr
Karl Johnston
(ISOLDE/CERN)
Prof.
Martin Henry
(School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland)
Ms
Monika Stachura
(Department of Natural Sciences, University of Copenhagen, Thorvaldsensvej 40, DK-1871, Frederiksberg C, Denmark)