8–10 Dec 2010
CERN
Europe/Zurich timezone

The sign of the electric field gradient of wide bandgap semi-conductors measured with β-γ angular correlation

9 Dec 2010, 17:30
20m
503/1-001 - Council Chamber (CERN)

503/1-001 - Council Chamber

CERN

162
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Accepted Solid State II

Speaker

Mr Patrick Kessler (Helmholz-Institut für Strahlen- und Kernphysik der Universität Bonn)

Description

The sign of the electric field gradient can be measured with the β-γ-perturbed angular correlation. This can help in the understanding and improvement of current models and simulations of crystal structures. In this work the wide bandgap semiconductors AlN,GaN and ZnO are investigated.. The results from the last two collections at ISOLDE are presented. 115Cd and 111Ag were implanted in 3µm thin films of GaN and AlN on sapphire substrate and in bulk ZNO. After thorough annealing we performed β-γ PAC measurements.

Author

Mr Patrick Kessler (Helmholz-Institut für Strahlen- und Kernphysik der Universität Bonn)

Co-authors

Mr J. G. Correira (Instituto Tecnólogico e Nuclear, Estrada Nacional 10, P-2686-953 Sacavém, Portugal) Mr K. Johnston (Technische Physik, Universität des Saarlands, Building E2.6, P.O. Box 151150, 66041 Saarbrücken, Germany) Ms K. Lorenz (Instituto Tecnólogico e Nuclear, Estrada Nacional 10, P-2686-953 Sacavém, Portugal) Reiner Vianden (Helmholz-Institut für Strahlen- und Kernphysik der Universität Bonn) Mr V. Germic (Helmholz-Institut für Strahlen- und Kernphysik der Universität Bonn)

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