Conveners
LGAD - Low Gain Avalanche Diodes
- Salvador Hidalgo (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
In this contribution, I will discuss two possible evolutions of the LGAD design.
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DC-RSD: up to now, resistive read-out in silicon detectors has been used only in AC-coupled detectors, the so-called AC-RSD or AC-LGAD. I will present here the first attempt to apply resistive read-out to a DC-coupled sensor.
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LGAD with bias ring: recent beam tests results showed that LGADs suffer...
The High Granularity Timing Detector (HGTD) project of ATLAS will reduce the pile-up effect in HL-LHC by providing precise time measurement of tracks. The Low- Gain Avalanche Detector (LGAD) with time resolution better than 35(70) ps before(after) irradiation is the key technology which has been studied by many institutes. The Institute of High Energy Physics Chinese Academy of Science (IHEP)...
Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in single pad configuration, 2x2 arrays, and related PIN diodes, and exposed to Co-60 sources for study. Devices were fabricated with a range of dopant layer concentrations and, for the...
In this contribution, we will present measurements on
neutron-irradiated LGADs corresponding to our 6-inch, 50µm active
layer thick, epitaxial wafers run (6LG3). Samples were fabricated
using three boron implantation doses, and one energy, for the gain
layer definition. Gain, collected charge, acceptor removal constant
and timing measurements were carried out on these LGADs...
The fast rising signal of LGADs with high signal-to-noise ratio is key to achieve an excellent charge collection and time resolution for Minimum Ionizing Particles (MIPs). The LGAD technology will be used for the HL-LHC in the upgrade of both ATLAS and CMS timing detectors.
A full characterization of CNM LGADs on Si-Si and low resistivity epitaxial wafers irradiated up to 1e16 neq/cm2 will be...
Trench-Isolated LGAD (TI-LGAD) is a novel LGAD design where the standard inter-pixel isolating structure has been replaced with a trench, physically etched in the silicon and filled with a dielectric material.
The "RD50 TI-LGAD" project aimed at exploiting this new technology for the production of pixelated detectors with pixel and strip pitches down to 50 µm.
In the project framework, FBK...
We present a characterization of the novel Trench-Isolated LGAD (TI-LGAD) technology using a scanning TCT setup. The studied devices belong to the first production of pixelated TI-LGADs at FBK done in the framework of the RD50 collaboration. The TI-LGAD is a variation of the Low-Gain Avalanche Detector (LGAD) in which the segmentation of the detector in pixels is done by etching physical...
The Flavor physics program is one of the important topics for future lepton collider projects. In order to explore the full potential of the flavor physics program, a time-of-flight detector is needed to perform particle identification at an energy range from 1GeV to 5GeV.
We propose a time-of-flight detector based on AC-coupled LGAD technology, which has high timing resolution and spatial...
AC-coupled LGADs, also referred to as resistive silicon detectors (RSDs), rely on a design in which the multiplication layer and n$^{+}$ contact are continuous, and only the metal layer is patterned. In AC-LGADs, the signal is capacitively coupled from the continuous, resistive n$^{+}$ layer over a dielectric to the metal electrodes. The spatial resolution is not only influenced by the...
In this contribution we present RSD2, the second production of Resistive AC-Coupled Silicon Detectors (RSD), a new frontier in 4D particle tracking through Silicon detectors with internal gain and 100% fill-factor. RSD are n-in-p LGAD-based detectors characterized by three key-elements: (i) a continuous multiplication implant, without any segmentation, (ii) a resistive n-cathode and...
In this contribution, we present a new development of radiation-resistant silicon sensors. This innovative sensor design exploits the recently observed saturation of radiation damage effects on silicon, together with the usage of thin substrates, intrinsically less affected by radiation. The internal multiplication of the charge carriers will be used to overcome the small signals coming from...
The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for several applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy as well as quantum information. The Low-Gain Avalanche Diode (LGAD) silicon technology has already shown excellent timing performances, but since fine...
We present measurements of AC-LGADs performed at Fermilab’s test beam facility using 120 GeV protons. We studied the performance of various strip and pixel sensors that were produced by BNL and HPK. The measurements are performed with our upgraded test beam setup that utilizes a high precision telescope tracker, and a simultaneous readout of up 6 channels per sensor, which allows detailed...
Achieving granularity below the 1 mm scale (100 um or less) while maintaining high efficiency, precise timing, and good spatial resolution is a goal of continued R&D on silicon diode Low Gain Avalanche Detectors (LGADs). One approach, proposed by the SCIPP ultrafast sensor R&D group, is to make use of the diode junction to create avalanche-generating fields within the sensor, and then to bury...
Using Secondary Ion Mass Spectroscopy, the carbon and boron doping profile distributions of FBK and CNM LGADs are discussed. Obtained results are cross-referenced with previously reported performance of measured devices and conclusions are established with respect tot the carbonated process implementation.
We revisit the radiation hardness of Carbonated CNM LGAD detectors (50 active thickness, run 10478) irradiated with PS protons up to 10$^{15}$ $n_{eq}/cm^{2}$. The study comprises electrical characterization of the gain layer doping removal, charge collection and timing with radioactive source.
