Name: The 39th RD50 Workshop (Valencia)
Start: 2021-11-17T08:30:00+01:00
End: 2021-11-19T19:00:00+01:00
Location: ADEIT

The 39th RD50 Workshop (Valencia)

from Wednesday 17 November 2021 (08:30) to Friday 19 November 2021 (19:00)

Monday 15 November 2021
Tuesday 16 November 2021
Wednesday 17 November 2021
08:30
08:30 - 09:20
Contributions

08:30 Registration

09:00 Welcome
09:20
09:20 - 12:40
Contributions

09:20 Development of 2D GaN and 3D SiC detectors - Hongwei Liang (Dalian University of Technology) XIn Shi (Institute of High Energy Physics Chinese Academy of Sciences) Xiaochuan Xia (Dalian University of Technology) Zhengzhong Zhang (Dalian University of Technology)

09:40 Test results of the first 4H-SiC LGAD from NJU China - Tao Yang (Chinese Academy of Sciences (CN)) Qing Liu (Nanjing University)

10:00 Non-Ionizing Energy Loss: Geant4 simulations towards more advanced NIEL concept for radiation damage modelling and prediction - Vendula Subert (Hamburg University (DE))

10:20 Study of gamma irradiated p-type silicon diodes with different resistivities - Iveta Zatocilova (Charles University (CZ))

10:40 Update on radiation damage investigation of epitaxial p-type silicon using Schottky and pn-junction diodes - Christoph Thomas Klein (Carleton University (CA))

11:30 Defect characterization studies on highly irradiated Low Gain Avalanche Detectors - Anja Himmerlich (CERN)

11:50 Investigation of the BiOi defect in EPI and Cz silicon diodes using Thermally Stimulated current (TSC) and Thermally Stimulated Capacitance (TS-Cap) - Chuan Liao (Hamburg University (DE))

12:10 Discussion: Defect Studies & New Materials - Ioana Pintilie (NIMP Bucharest-Magurele, Romania) Michael Moll (CERN)
12:40
12:40 - 17:20
Contributions

12:40 Evidence of multistage charge collection in Si irradiated detectors operated as the monitors of intensive fragmented proton beams - Artem Shepelev (Ioffe Institute (RU)) Artem Shepelev (Ioffe Institute) Elena Verbitskaya (Ioffe Physico-Technical Institute RAS) Elena Verbitskaya (Ioffe Institute (RU)) Vladimir Eremin (Ioffe Institute (RU))

13:00 Thickness dependence of the Single Event Burnout bias threshold in fs-laser based mortality study on LGADs from different producers - Gordana Lastovicka Medin (University of Montenegro (ME))

13:15 Updated IBIC and Ion-TCT study on LGAD at RB: Work in Progress on Effects of Screening in LGADs - Gordana Lastovicka Medin (University of Montenegro (ME))

14:45 Towards an All-Fiber Femtosecond Laser System as Excitation Source in the Two-Photon Absorption – Transient Current Technique - Azahara Almagro-Ruiz (FYLA LASER)

15:05 Gain suppression mechanism in LGADs and SEE studies in a RD53B chip measured with the TPA-TCT method - Sebastian Pape (Technische Universitaet Dortmund (DE))

15:25 Compensation of TPA-TCT signal fluctuations using the 2nd harmonic - Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))

15:40 Effects of charge screening in LGADs - Gregor Kramberger (Jozef Stefan Institute (SI))

16:00 Determining the Impact Ionisation Parameters for LGADs - Alissa Shirley-Ann Howard (Jozef Stefan Institute (SI))

16:20 Discussion: TPA-TCT system and studies - Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))

16:50 Announcement: Trento Workshop in Freiburg - Ulrich Parzefall (Albert Ludwigs Universitaet Freiburg (DE))
17:20

17:20 - 18:50
Thursday 18 November 2021
09:00
09:00 - 09:10
Contributions

09:00 Thursday 18 Introduction
09:10
09:10 - 18:40
Contributions

09:10 Topics in LGAD designs - Nicolo Cartiglia (INFN Torino (IT))

09:30 Before and after irradiation test results of the low gain avalanche diodes developed by IHEP in China - Xuewei Jia (Chinese Academy of Sciences (CN))

09:50 Collected charge, gain and jitter measurement of unirradiated LGADs from Teledyne e2v - Martin Gazi

10:10 Timing Results of LGADs from Teledyne e2v using an Sr-90 Beta Source - Jonathan Mulvey

10:30 Response of Low Gain Avalanche Detector Prototypes to Gamma Radiation - Josef Daniel Sorenson (University of New Mexico (US))

11:20 Nicolo Part II - LGAD design

11:40 Time Resolution Studies of Low Gain Avalanche Detectors Fabricated at Micron Semiconductor Ltd. - Ryuji Moriya

12:00 Timing measurements on neutron-irradiated LGADs in epitaxial wafers - Jairo Antonio Villegas Dominguez

12:20 Performance studies of CNM LGADs on Si-Si and epitaxial wafers irradiated to extreme fluences up to 1e16 neq/cm2 - Lucia Castillo Garcia (IFAE - Barcelona (ES))

12:40 Status and first results of the "RD50 TI-LGAD" Project - Giovanni Paternoster (Fondazione Bruno Kessler)

13:00 TI-LGAD characterization using TCT setup at UZH - Matias Senger (Universitaet Zuerich (CH))

14:40 AC-coupled LGAD development by IHEP for future lepton collider - Zhijun Liang (Chinese Academy of Sciences (CN)) Mengzhao Li (Chinese Academy of Sciences (CN))

15:00 Capacitance-voltage measurements on AC-LGADs - Jennifer Ott (University of California,Santa Cruz (US))

15:20 RSD2, the new production of AC-LGADs at FBK - Marco Mandurrino (INFN)

15:40 Present and future development of thin silicon sensors for extreme fluences - Valentina Sola (Universita e INFN Torino (IT))

16:30 Characterization of AC-LGAD sensors using the ALTIROC readout ASIC [US-afternoon] - Gabriele D'Amen (Brookhaven National Laboratory (US))

16:50 Test Beam Measurements of BNL and HPK AC-LGADs - Christopher Madrid (Fermi National Accelerator Lab. (US))

17:10 Signal-sharing in AC-LGAD (RSD) - Marcus Wong

17:30 The Deep Junction LGAD: Concept and Progress [US - afternoon] - Carolyn Gee (University of California,Santa Cruz (US))

17:50 Discussion: LGAD - Giulio Pellegrini (Universidad de Valencia (ES)) Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)) Gregor Kramberger (Jozef Stefan Institute (SI)) Nicolo Cartiglia (INFN Torino (IT)) Salvador Hidalgo (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
Friday 19 November 2021
09:00
09:00 - 09:10
Contributions

09:00 Friday 19 Introduction
09:10 Pixel Sensors and Monolithic Devices
Pixel Sensors and Monolithic Devices
09:10 - 12:10
Contributions

09:10 Soft X-Ray Low Gain Avalanche Detectors with 55um pitch for Imaging Applications using Timepix4 ASIC - Neil Moffat (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))

09:30 Performance studies of Low Gain Avalanche Detectors (LGAD) coupled to the Timepix3 ASIC - Dima Maneuski (University of Glasgow (GB))

09:50 HVCMOS pixel characterization with the RBI Microprobe - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES)) Eva Vilella Figueras (University of Liverpool (GB)) Samuel Powell (University of Liverpool) Georgios Provatas (Ruder Boskovic Institute)

10:10 Guard-ring optimisation for sensors in LFoundry 150nm CMOS technology for the RD50-MPW3 submission - Sinuo Zhang (University of Bonn (DE))

10:30 Performance of irradiated RD53A pixel modules with passive CMOS sensors - Anna Macchiolo (Universitaet Zuerich (CH))

11:20 Evaluation of MOS and Gated Diode Devices of the ATLAS ITk Test Chip - Ezekiel Staats (Carleton University (CA))

11:40 Discussion: Pixel, 3D and CMOS sensors - Eva Vilella Figueras (University of Liverpool (GB))
12:10
12:10 - 17:00
Contributions

12:10 Time resolution of an irradiated 3D silicon pixel detector - Dario De Simone (Universitaet Zuerich (CH))

12:30 Solid state electron multiplier - Marius Mahlum Halvorsen (University of Oslo (NO))

12:50 Bulk damage study in gamma irradiated n-in-p silicon diodes - Vera Latonova (Czech Academy of Sciences (CZ))

13:10 Upgraded Proton Irradiation Site at Bonn University - Pascal Wolf (University of Bonn (DE))

14:50 Radiation tolerance study using 8-inch full-wafer silicon sensors for CMS HGCAL - Oliwia Agnieszka Haluszczak (Wroclaw University of Science and Technology (PL))

15:10 Radiation tolerance study using test-structure diodes from 8-inch silicon sensors for CMS HGCAL - Jan Kieseler (CERN)

15:30 Discussion: New Structures and Standard Sensors - Gianluigi Casse (University of Liverpool (GB))
17:00
17:00 - 17:10
Contributions

17:00 Farewell

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