Conveners
Defect and Material Characterization
- Michael Moll (CERN)
Wide band gap semiconductors, such as GaN and SiC, have exhibited notable advantages, when they are applied as a nuclear radiation detector in a harsh environment of high temperature or strong radiation field. Recently a GaN alpha-particle detector of p-i-n structure was fabricated on a sapphire substrate in this article. The intrinsic layer of the detector was isoelectronic Al-doped GaN with...
SiC as a typical wide bandgap semiconductor material has the potential to be used in the high energy field thanks to its good performance under radiation environment as well as running without cooling compared with traditional Si devices. Followed by the previous study of the timing performance of the 4H-SiC PIN device, a first 4H-SiC LGAD has been fabricated by Nanjing University (NJU) China....
The Non Ionizing Energy Loss (NIEL) concept is used to compare and scale the damage impacted on semiconductor devices in different radiation fields. A particular weakness of the present NIEL concept consists in the inability to predict the different formation rates of cluster and point defects in the silicon (Si) crystal for different particles and particle energies. NIEL gives only the total...
We report on results of the irradiation bulk damage study in gamma irradiated standard float zone p-type silicon diodes. The study includes three types of diodes with different resistivities by CNM, HPK and IFX manufactures. The diodes were irradiated by Cobalt-60 gamma source up to 3.66 MGy in approximate charged particle equilibrium and then annealed for 80 minutes at 60°C. Electrical...
This project focuses on the investigation of trap energy levels introduced by radiation damage in epitaxial p-type silicon. Using 6-inch wafers of various boron doping concentrations (1e13, 1e14, 1e15, 1e16, and 1e17 cm-3) with a 50µm epitaxial layer, multiple iterations of test structures consisting of Schottky and pn-junction diodes of different sizes and flavours are being fabricated at RAL...
The operation of Low Gain Avalanche Detectors (LGADs) in the harsh radiation environment of the CERN-LHC is limited by the disappearance of the gain at particle fluences higher than 2E+15 cm-2 due to the so-called Acceptor Removal Effect (ARE). Thereby radiation induced defects inside the highly doped LGAD multiplication layer are created, like the boron-interstitial oxygen-interstitial...
In this work the Thermally Stimulated Techniques including TS-Current (TSC) and TS-Capacitance (TS-Cap) has been used to study the properties of the radiation induced BiOi defect complex by 6 MeV electrons. Two different types of diodes manufactured on p-types epitaxial-(EPI) and czochralski-CZ silicon with a resistivity of about 10 Wcm were irradiated with fluence values in the range between...
