Investigation of high resistivity p-type FZ silicon diodes after 60Co - gamma irradiation

29 Nov 2022, 11:40
20m
Salón de Grados, 2nd Floor (ETSI Seville)

Salón de Grados, 2nd Floor

ETSI Seville

Escuela Técnica Superior de Ingenieros Camino de los Descubrimientos s/n 41092 Isla de la Cartuja, Sevilla Spain

Speaker

Chuan Liao (Hamburg University (DE))

Description

Two types of high resistivity p-type FZ diodes with p-stop and p-spray isolation between the pad and the guard ring were irradiated with 60Co gamma-rays. The dose values were 10, 20, 100, and 200 Mrad. In this work microscopic (TSC) as well as macroscopic (I-V, C-V) studies on isothermal heat treatments at 80 °C and isochronal annealing from 80 °C up to 300 °C were performed and analyzed for diodes irradiated to 100 and 200 Mrad. The results of these measurements will be presented. In addition, the unexpected frequency dependence of the C-V measurements in correlation with surface current measurements will be reported and discussed.

Authors

Anja Himmerlich (CERN) Eckhart Fretwurst (Hamburg University (DE)) Erika Garutti (Hamburg University (DE)) Ioana Pintilie (National Inst. of Materials Physics (RO)) Dr Joern Schwandt (Hamburg University (DE)) Leonid Makarenko (Byelorussian State University (BY)) Michael Moll (CERN) Yana Gurimskaya

Presentation materials