Speaker
Francesco Moscatelli
(IOM-CNR and INFN, Perugia (IT))
Description
In this contribution, I will review the performance improvements that two design innovations, low-gain (LGAD) and resistive read-out (RSD), have brought to silicon sensors. Large signals lead to improved temporal precision (~ 30 ps), while charge sharing allows for achieving excellent spatial resolution (20 microns) with large pixels (~ 1 x1 mm2). LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers.
I will present new results, obtained with sensors belonging to the second FBK production of RSD, that demonstrate how a combined resolution of 30 ps and 30 microns can be obtained with pixels as large as 1 x 1 mm2.
