The 31st International Workshop on Vertex Detectors

Session

monolithic

25 Oct 2022, 13:35

Conveners

monolithic: (1)

• .Yoshiyuki Onuki (University of Tokyo)

monolithic: (2)

• .Yoshiyuki Onuki (University of Tokyo)

26. [D01] MuPix: an HV-MAPS for the Mu3e experiment

Luigi Vigani (Ruprecht Karls Universitaet Heidelberg (DE))

25/10/2022, 13:35

Talk (invited speaker only) The talk is invitation only

Mu3e is an experiment based at PSI which searches for the charged lepton flavour violating decay µ→ eee with an aimed sensitivity of 1 event in 10^16 decays. The low energy of the decay products imposes harsh constraints to the momentum resolution and, ultimately, to the material budget. Among the several measures to minimize the material budget, the vertex detector adopts the HV-CMOS...

38. [D02] Design and performance of the Monopix2 reticle-scale DMAPS with a column-drain read-out architecture

Ivan Dario Caicedo Sierra (University of Bonn (DE))

25/10/2022, 14:05

Talk (invited speaker only) The talk is invitation only

The development of depleted monolithic active pixel sensors ("DMAPS") aims to meet the hit-rate and radiation-hardness requirements of tracker systems in modern and future particle collider experiments. These devices use multi-well commercial CMOS processes to integrate sensor, front-end and read-out electronics in a single piece of silicon. Their radiation tolerance is enhanced through design...

39. [D03] Design and performance of RD50 DMAPS sensors for future colliders

Jory Sonneveld (Nikhef National institute for subatomic physics (NL))

25/10/2022, 14:35

Talk (invited speaker only) The talk is invitation only

The CERN RD50 collaboration develops depleted monolithic active pixel CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. The most recent prototype, the RD50-MPW3, is a 150 nm High Voltage CMOS LFoundry chip that features pixels with a 62 μm pitch that integrate both digital and analog readout electronics...

24. [D04] First Results of ATLASPix 3.1 Telescope

Lingxin Meng (Lancaster University (GB))

25/10/2022, 15:05

Poster (short oral)

ATLASPix is a high-voltage CMOS pixel sensor (HV-CMOS) designed as a candidate for the ATLAS Inner Tracker (ITk) upgrade. Using the commercial 180 nm CMOS process, they are more cost effective compared to hybrid pixel detectors. ATLASPix 3.1 has an area of 2$\times$2.1 cm$^2$, consisting of 150$\times$50 $\mu$m$^2$ pixels, each with a large n-well as charge collection electrode.

With the...

21. [D05] Characterisation of neutron irradiated Digital Pixel Test Structures produced in 65 nm TPSCo CMOS process

Pascal Becht (Ruprecht Karls Universitaet Heidelberg (DE))

25/10/2022, 15:20

Poster (short oral)

The ALICE Inner Tracking System has been recently upgraded to a new version (ITS2), which is entirely based on Monolithic Active Pixel Sensors (MAPS). For a future upgraded tracker, the ITS3, it is intended to replace the three innermost layers of the current ITS2 to further improve its position resolution. The proposed design features wafer-scale, ultra-thin, truly cylindrical MAPS. In order...

72. [D06] R&D status of monolithic SOI pixel sensor for vertex detector

Akimasa Ishikawa (KEK)

25/10/2022, 16:00

Talk (invited speaker only) The talk is invitation only

SOI wafer consists of a high-resistive handle wafer and a CMOS LSI circuit layer, and these two layers are isolated by a Silicon oxide layer. The handle wafer corresponds to the radiation sensor.
Produced charges in the sensor are read out through tungsten VIA to the circuit. Sensor thickness can be changed from 500 to 50 um according to application. This allows the fabrication of complex...

11. [D07] The monolithic ASIC for the high precision preshower detector of the FASER experiment at the LHC

Didier Ferrere (Universite de Geneve (CH))

25/10/2022, 16:30

Talk (invited speaker only) The talk is invitation only

The FASER experiment at the LHC will be instrumented with a high precision W-Si preshower to identify and reconstruct electromagnetic showers produced by two O(TeV) photons at distances down to 200µm. The new detector will feature a monolithic silicon ASIC with hexagonal pixels of 65 µm side, extended dynamic range for the charge measurement and capability to store the charge information for...

69. [D08] Development of the radiation hard MALTA CMOS sensor for tracking applications

Heinz Pernegger (CERN)

25/10/2022, 17:00

Talk (invited speaker only) The talk is invitation only

The MALTA family of DMAPS produced in Tower 180 nm CMOS technology targets
radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to 3e15 n/cm2 and time resolution below 2 ns, with uniform charge collection efficiency across the Pixel of size 36.4 × 36.4 𝜇m2 with a 3 𝜇m2 electrode size. The MALTA2...

55. SOI