Conveners
monolithic: (1)
- .Yoshiyuki Onuki (University of Tokyo)
monolithic: (2)
- .Yoshiyuki Onuki (University of Tokyo)
Mu3e is an experiment based at PSI which searches for the charged lepton flavour violating decay µ→ eee with an aimed sensitivity of 1 event in 10^16 decays. The low energy of the decay products imposes harsh constraints to the momentum resolution and, ultimately, to the material budget. Among the several measures to minimize the material budget, the vertex detector adopts the HV-CMOS...
The development of depleted monolithic active pixel sensors ("DMAPS") aims to meet the hit-rate and radiation-hardness requirements of tracker systems in modern and future particle collider experiments. These devices use multi-well commercial CMOS processes to integrate sensor, front-end and read-out electronics in a single piece of silicon. Their radiation tolerance is enhanced through design...
The CERN RD50 collaboration develops depleted monolithic active pixel CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. The most recent prototype, the RD50-MPW3, is a 150 nm High Voltage CMOS LFoundry chip that features pixels with a 62 μm pitch that integrate both digital and analog readout electronics...
ATLASPix is a high-voltage CMOS pixel sensor (HV-CMOS) designed as a candidate for the ATLAS Inner Tracker (ITk) upgrade. Using the commercial 180 nm CMOS process, they are more cost effective compared to hybrid pixel detectors. ATLASPix 3.1 has an area of 2$\times$2.1 cm$^2$, consisting of 150$\times$50 $\mu$m$^2$ pixels, each with a large n-well as charge collection electrode.
With the...
The ALICE Inner Tracking System has been recently upgraded to a new version (ITS2), which is entirely based on Monolithic Active Pixel Sensors (MAPS). For a future upgraded tracker, the ITS3, it is intended to replace the three innermost layers of the current ITS2 to further improve its position resolution. The proposed design features wafer-scale, ultra-thin, truly cylindrical MAPS. In order...
SOI wafer consists of a high-resistive handle wafer and a CMOS LSI circuit layer, and these two layers are isolated by a Silicon oxide layer. The handle wafer corresponds to the radiation sensor.
Produced charges in the sensor are read out through tungsten VIA to the circuit. Sensor thickness can be changed from 500 to 50 um according to application. This allows the fabrication of complex...
The FASER experiment at the LHC will be instrumented with a high precision W-Si preshower to identify and reconstruct electromagnetic showers produced by two O(TeV) photons at distances down to 200µm. The new detector will feature a monolithic silicon ASIC with hexagonal pixels of 65 µm side, extended dynamic range for the charge measurement and capability to store the charge information for...
The MALTA family of DMAPS produced in Tower 180 nm CMOS technology targets
radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to 3e15 n/cm2 and time resolution below 2 ns, with uniform charge collection efficiency across the Pixel of size 36.4 × 36.4 𝜇m2 with a 3 𝜇m2 electrode size. The MALTA2...
