Speaker
Prof.
Hongwei Liang
(Dalian University of Technology)
Description
A prototype of 360 um thick single crystal SiC has been fabricated with holes of 100um using laser drilling method. Form scanning electron microscope (SEM) images, there is no crack extending to the single crystal, and no residue on the side wall. It is found that the SiC sidewall is carbon-riched after laser and chemical treatment. The electrodes of 3D 4H-SiC device are formed by extruding the molten indium metal. The ohmic contact characteristic is formed. When 100 V voltage is applied, the current value are 6 pA and 10 nA under dark and 405 nm illumination conditions.
Authors
Prof.
Hongwei Liang
(Dalian University of Technology)
Prof.
Xiaochuan Xia
(Dalian University of Technology)
Xin Shi
(Chinese Academy of Sciences (CN))
