Speaker
Christopher Palmstrom
(University of California, Santa Barbara)
Description
In order to study and control epitaxial growth of dissimilar materials, molecular beam epitaxial growth has been combined with scanning tunneling microscopy and spectroscopy (STM/S) and angle resolved photoelectron spectroscopy (ARPES) allowing both the structural and electronic properties to be investigated at the atomic scale. This presentation emphasize the formation of epitaxial topological materials on III-V semiconductor surfaces.
Author
Christopher Palmstrom
(University of California, Santa Barbara)
