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CEC/ICMC 2023 Abstracts & Technical Program

9–13 Jul 2023
Hawaii Convention Center
US/Hawaii timezone

Conference Management: Centennial Conferences

Session

M1Or1B: Special Session: Topological Materials for Electronics I

10 Jul 2023, 09:30
323A

323A

Conveners

M1Or1B: Special Session: Topological Materials for Electronics I

  • Mike Sumption (The Ohio State University)
  • Charles Rong (U.S. Army Research Laboratory)

Presentation materials

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  1. 465. M1Or1B-01: [Invited] Epitaxial growth and studies of dissimilar materials heterostructures by molecular beam epitaxy
    Christopher Palmstrom (University of California, Santa Barbara)
    10/07/2023, 09:30
    Invited Oral

    In order to study and control epitaxial growth of dissimilar materials, molecular beam epitaxial growth has been combined with scanning tunneling microscopy and spectroscopy (STM/S) and angle resolved photoelectron spectroscopy (ARPES) allowing both the structural and electronic properties to be investigated at the atomic scale. This presentation emphasize the formation of epitaxial...

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  2. 496. M1Or1B-02: [Invited] Spin chirality driven magneto - transport in Mn3Sn and Co3Sn2S2 Kagome magnets
    Prof. Ramesh Budhani (Morgan State University)
    10/07/2023, 10:00
    Invited Oral

    The electrically and thermally driven magneto-transport in two-dimensional frustrated spin systems reveals several fascinating features of correlated electron physics in magnetic Weyl semimetals. Here we present our measurements of anomalous Hall resistivity and Nernst voltage in Kagome spin lattices of Mn3Sn and Co3Sn2S2 epitaxial films prepared by multi-target magnetron sputtering. While the...

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  3. 560. M1Or1B-03: [Invited] Real-space screening of bulk topology of high-quality two-dimensional insulators
    Prof. Pallab Goswami (Northwestern University)
    10/07/2023, 10:30
    Invited Oral

    Recent years have seen multiple high-throughput studies reveal an immense number of topological materials through use of symmetry indicators. Despite this success, three-dimensional topological insulators (TIs) admitting a band-gap larger than Bi2Se3 and two-dimensional TIs admitting a band gap larger than β-bismuthene, two of the originally proposed TIs, remain extremely rare, creating a...

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