The influence of arcing on radio-frequency capacitively coupled plasma

5 Mar 2024, 10:30
30m
Oral Experiments and Diagnostics Experiments and Diagnostics

Speaker

chul hee cho (Chungnam national university)

Description

While arcing formation mechanism has been widely studied, the influence of arcing on background plasma has remained underexplored. In this study, we investigated the effect of arcing on capacitively coupled plasma by employing arcing induced probe (AIP), which plays a role in localizing arcing on probe tip edge. We analyzed behavior of capacitively coupled plasma by analyzing various diagnostics: the voltage of a floating probe, which can represent plasma potential, voltage and current of discharge electrode, and time variation of electron density of plasma using the Fourier cutoff probe method. We found different behavior of discharge impedance component, that is an increase in the resistance and a decrease in the reactance with arcing formation. It suggests that electrons, which are emitted from arcing spot, can disrupt the sheath on the discharge electrode by flowing toward the discharge electrode. Time variation analysis on electron density and sheath thickness supports the sheath disruption induced by arcing. This research offers valuable understanding on the interaction between arcing and background plasma.

Author

chul hee cho (Chungnam national university)

Co-authors

Dr Sijun Kim (Chungnam national university) Dr Youngseok Lee (Chungnam national university) Mr Inho Seong (Chungnam national university) Mr Wonnyoung Jeong (Chungnam national university) Mr Minsu Choi (Chungnam national university) Mr Byeong yeop Choi (Chungnam national university) Mr Seong hyun Seo (Chungnam national university) Dr Youbin Seol (Chungnam national university) Mr Woo been Lee (Chungnam national university) Prof. Shinjae You (Chungnam national university)

Presentation materials