Speaker
Description
The silicon 3D detectors have become the choice of semiconductor tracking detectors in most radiation harsh environments. The vertical electrode diameter was often limited to around 10 um by that governing the cell sizes to ~50x50 um2 for sufficient fill factor. The signal requirements usually limited the thickness to >200 um. The novel 3D sensors produced at IME-CAS within DRD3 WP2 project “Novel silicon 3D-trench pixel detectors based on 8-inch CMOS process” produced 3D sensors with columns as narrow as 0.5 um with aspect ratios of close to 100:1. Pixel detectors were produced with cell sizes down to 15x15 um2. Such thin columns and the quality of produced sensors lead to onset of gain due to impact ionization at high enough bias voltages resembling gaseous detectors. Unlike in LGADs the gain is achieved simply by geometry and is much less affected by precise doping levels of columns. The devices as thin as 30 um were produced with gains up to 10. As the gain is achieved by geometry and doesn’t critically depend on doping levels they are much more radiation hard than LGAD detectors. These detectors are very promising candidates for ultimately radiation hard 4D tracking detectors for future hadron colliders. In the presentation the first measurements with different characterization techniques will be presented, their performance and limitations with an outlook to the future developments.
| Name of the speaker | Gregor Kramberger |
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