Speaker
Gregor Kramberger
(Jozef Stefan Institute (SI))
Description
Special diodes were designed on RD50 multiplication mask which combine the ease of use of a pad-detector with electric field of a strip detector. A series of charge collection measurements was performed with diodes of different implant properties and thicknesses. The diodes were irradiated with neutrons to the total accumulated fluence of 8e16 cm-2. Charge collection efficiency for 90Sr was measured at each fluence and for selected detectors also during long term annealing. The values were compared between the wafers with different properties as well as with standard pad detectors.
Primary author
Gregor Kramberger
(Jozef Stefan Institute (SI))
Co-authors
Igor Mandic
(Jozef Stefan Institute (SI))
Marko Mikuz
(Jozef Stefan Institute (SI))
Marko Milovanovic
(Jozef Stefan Institute, Ljubljana)
Dr
Marko Zavrtanik
(Jozef Stefan Institute (SI))
Vladimir Cindro
(Jozef Stefan Institute (SI))
