Conveners
Irradiation Facilities, 3D and Pixel Detectors (joined with ATLAS PPS)
- Giulio Pellegrini (Universidad de Valencia (ES))
- Daniel Muenstermann (CERN)
Andrea Micelli
(IFAE Barcelona)
16/11/2012, 09:00
RD50/PPS session (Friday morning)
Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness. In the framework of the ATLAS Forward Physics (AFP) program, work has been carried out to study the suitability of 3D pixel devices for forward proton tracking. Minimal dead area and high efficiency after...
Vitaliy Fadeyev
(University of California,Santa Cruz (US))
16/11/2012, 09:20
Full Detector Systems
Within the framework of RD50 and ATLAS PPS collaborations, we are pursuing scribe-cleave-passivate (SCP) technology of making “slim edge” sensors. Such sensors have only a minimal amount of inactive peripheral region, which benefits construction of large-area tracker and imaging systems. Key application steps of this method are surface scribing, cleaving, and passivation of the resulting...
Victor Hugo Benitez Casma
(Universidad de Valencia (ES))
16/11/2012, 09:40
Full Detector Systems
An update will be presented on the Common RD50 Project "Low Resistance Strip Sensors". Three RD50 institutes are collaborating in this project (CNM-Barcelona, IFIC-Valencia, and SCIPP-Santa Cruz), in which a new method to enhance the sensor hardness to beam-loss damage is studied. The fabrication has been combined with new experiments related with another RD50 Common Project involving Slim...
Stefano Terzo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
16/11/2012, 10:00
Radiation Damage in LHC Detectors (Wednesday morning)
Silicon pixel modules employing n-in-p planar sensors with an active thickness ranging from 75µm to 285µm were assembled with both FE-I3 and FE-I4 ATLAS chips.
The thinned sensors are designed to avoid the signal degradation and ensure the radiation hardness even after high fluences, moreover the n-in-p technology requires a single side processing and is a cost-effective alternative to...
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
16/11/2012, 10:20
RD50/PPS session (Friday morning)
We will report about the characterization of FE-I3 and FE-I4 active edge planar n-in-p pixels produced at VTT, Finland. The sensor thickness is 100 um and different geometries of the sensor edges have been implemented, down to an inactive width of only 50 um. The interconnection of the sensors to the ATLAS FE-I3 and FE-I4 chips has been performed at VTT, with solder bump bonding.
In addition...
Daniel Muenstermann
(CERN)
16/11/2012, 11:10
We explore the concept of using a deep-submicron HV CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Unlike fully integrated monolithic active pixel sensors (MAPS), such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most of the...
Yoshinobu Unno
(High Energy Accelerator Research Organization (JP))
16/11/2012, 11:30
Richard French
(The University of Sheffield)
16/11/2012, 11:50
Full Detector Systems
At the end of 2012 the proton irradiation facility at the CERN PS will shut down for two years. With this in mind a new irradiation facility has been setup at Birmingham University. This uses a newly built high intensity area of a 26MeV proton cyclotron in the medical physics department. The facility can be used to irradiate silicon sensors, optical components and mechanical structures (e.g ....
Giulio Pellegrini
(Universidad de Valencia (ES))
16/11/2012, 12:10
