Speaker
Mr
Babak ABI
(Oklahoma State University)
Description
The ATLAS has started the upgrade project to address the upgrade
of the LHC luminosity by factor of 10. ATLAS pixel tracker employs
optical links for communication between the sensors and data
acquisition. We study the radiation hardness of
PiN diodes which are part of the optical link. These components were
irradiated by 200 MeV protons up to 40 MRad and by gamma source
up to 10 MRad. The responsivity, dark current of PiN diodes are measured as a function of the radiation
dose.
Summary
We discuss the radiation tolerance of the silicon and GaAs PiN
diodes that will be part of the readout system of the ATLAS upgraded pixel detector. The components were irradiated by gamma source up to 10 MRad
and by 200 MeV protons up to 40 MRad. We study the radiation hardness of
PiNs as a function of the optical sensitive area and of their cut off frequency.
The dark current of PiN diode candidates is measured before and after
irradiation, and the response of the PiN diodes was monitored as a function of the radiation dose.
Primary author
Mr
Babak ABI
(Oklahoma State University)
Co-authors
Prof.
Flera Rizatdinova
(Oklahoma State University)
Prof.
Patrick Skubic
(Oklahoma University)
Prof.
k.k Gan
(Ohio State University)
